Energy level alignment between 9-phosphonoanthracene self-assembled monolayers and pentacene

被引:29
作者
Hill, I. G. [1 ]
Hwang, J.
Kahn, A.
Huang, C.
McDermott, J. E.
Schwartz, J.
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[3] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[4] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
基金
加拿大自然科学与工程研究理事会; 美国国家科学基金会; 加拿大创新基金会;
关键词
D O I
10.1063/1.2426957
中图分类号
O59 [应用物理学];
学科分类号
摘要
The alignment of molecular energy levels between a self-assembled monolayer of 9-phosphonoanthracene formed on silicon dioxide and pentacene has been studied using photoelectron spectroscopies. The semiconducting band gap of pentacene was found to be nested within that of the monolayer, resulting in a 1.3 +/- 0.1 eV barrier for hole injection from pentacene into the monolayer. The corresponding barrier to electrons, estimated from the adiabatic highest occupied molecular orbital/lowest unoccupied molecular orbital gaps of anthracene and pentacene, is 0.3 +/- 0.2 eV. Thus, the monolayer presents a significant energetic barrier to hole injection from a pentacene overlayer, but only a small to moderate barrier to electrons.
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页数:3
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