Accounting for anomalous oxidation states of silicon at the Si/SiO2 interface

被引：31

作者：

Cerofolini, GF ^{[1
]}

Galati, C ^{[1
]}

Renna, L ^{[1
]}

机构：

[1] ST Microelect, I-95100 Catania, CT, Italy

来源：

SURFACE AND INTERFACE ANALYSIS | 2002年 / 33卷 / 07期

关键词：

Si/SiO2; interface; hydrogen-terminated Si(100); silicon oxidation; number distribution; anomalous oxidation states;

D O I：

10.1002/sia.1424

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The early oxidation stages of hydrogen-terminated single-crystalline Si(100) exposed to a diluted N-2/N2O atmosphere at 850degreesC for different durations have been studied by XPS, following the evolution of the Si 2p signal. Evidence is given that the usual analysis, in terms of five pairs of peaks attributed to silicon in oxidation states from 0 to +4, does not account for the observed Si 2p signal. The spectrum is accurately reproduced only by assuming the existence of silicon in bonding configurations different from those usually assumed to occur at the Si/SiO2 interface. Copyright (C) 2002 John Wiley Sons, Ltd.

引用

收藏

页码：583 / 590

页数：8

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