High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

被引：303

作者：

Gonschorek, M. ^{[1
]}

Carlin, J-F. ^{[1
]}

Feltin, E. ^{[1
]}

Py, M. A. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.2335390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N/GaN material system. This results in a two-dimensional sheet resistance of 210 Omega/square. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

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