Failure of the modal gain model in a GaN based laser diode

被引：25

作者：

Mohs, G

Aoki, T

Nagai, M

Shimano, R

Kuwata-Gonokami, M

Nakamura, S

机构：

[1] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN

[2] NICHIA CHEM IND LTD, DEPT RES & DEV, TOKUSHIMA 774, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 11期

关键词：

semiconductors; optical properties; nonlinear optics;

D O I：

10.1016/S0038-1098(97)10005-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The optical gain in a Nichia(R) group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 mu m the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm(-1) are observed when exciting with 20 MW cm(-2). Plasma recombination from a quantum confined level is suggested as the gain mechanism. (C) 1997 Elsevier Science Ltd.

引用

页码：643 / 648

页数：6

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