Photoluminescence microscopy of InGaN quantum wells

被引：12

作者：

Herzog, WD ^{[1
]}

Singh, R ^{[1
]}

Moustakas, TD ^{[1
]}

Goldberg, BB ^{[1
]}

Unlu, MS ^{[1
]}

机构：

[1] BOSTON UNIV,CTR PHOTON RES,BOSTON,MA 02215

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high resolution studies reveal that the radiative recombination for the InGaN quantum wells is 50-50 times more efficient than for the underlying GaN film. (C) 1997 American Institute of Physics.

引用

页码：1333 / 1335

页数：3

共 8 条

[1] Growth and characterization of bulk InGaN films and quantum wells [J].