Heteroepitaxy of CuInS2 on Si(111)

Epitaxial layers of CuInS2 are grown on chemically hydrogen terminated Si(111) surfaces with 4 degrees miscut by molecular beam epitaxy. The morphological and structural properties are determined by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and texture analysis. The data show growth in the [112] direction and substantial twinning of the 75-nm-thick films. High-resolution cross-sectional micrographs of the interface indicate semicoherent epitaxial growth via an interfacial indium-rich secondary phase. The pronounced faceting of the film surface is discussed in relation to twin lamellae. (C) 1996 American Institute of Physics.