Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

被引：51

作者：

Heinrichsdorff, F

Krost, A

Grundmann, M

Bimberg, D

Bertram, F

Christen, J

Kosogov, A

Werner, P

机构：

[1] OTTO VON GUERICKE UNIV,D-39016 MAGDEBURG,GERMANY

[2] MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00614-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have systematically investigated the influence of MOCVD growth parameters on structural and optical properties of InxGa1-xAs/GaAs quantum dots (QDs) formed in the Stranski-Krastanow growth mode. The influence of growth interruption time, V/III ratio, In/Ga flux ratio and growth temperature was examined by photoluminescence (PL), transmission electron microscopy (TEM) and atomic force microscopy (AFM). For samples with high dot densities (up to 8 x 10(10) cm(-2)) the dots surprisingly show a preferential alignment along the [110] orientations differing from predictions of strain relaxation equilibrium theory and results for MBE grown InAs/GaAs dots. The square base shape of the quantum dots is oriented along (100) in agreement with MBE results and theoretical predictions.

引用

页码：568 / 573

页数：6

共 18 条

[11] SURFACE SEGREGATION OF 3RD-COLUMN IN GROUP III-V ARSENIDE COMPOUNDS - TERNARY ALLOYS AND HETEROSTRUCTURES [J].