Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2 degrees toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (10(1) over bar 2) planes and presented characteristic surface roughness striations along a [110] substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN. (C) 2000 American Institute of Physics. [S0003-6951(00)04818-X].