Relationship between porous silicon formation and hydrogen incorporation

被引：18

作者：

Allongue, P ^{[1
]}

deVilleneuve, CH ^{[1
]}

Bernard, MC ^{[1
]}

Peou, JE ^{[1
]}

BoutryForveille, A ^{[1
]}

LevyCLement, C ^{[1
]}

机构：

[1] CNRS,UPR 1332,LAB PHYS SOLIDES BELLEVUE,F-92190 MEUDON,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

silicon; hydrogen incorporation;

D O I：

10.1016/S0040-6090(96)09365-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Secondary ion mass spectroscopy was used to study the incorporation of deuterium into Si during the formation of porous silicon in fluoride D2O-based solutions. Results show that the deuterium diffuses from the pore tips towards the bulk silicon and remains in the pore walls in a high concentration. Measurements of the thickness of porous silicon suggest that the penetration of H species is a necessary condition for the porous Si layer to form. A simple model illustrates how the initiation of pores occurs by selective dissolution of H-induced structural defects. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 4

页数：4

共 21 条

[1] ETCHING OF SILICON IN NAOH SOLUTIONS .1. INSITU SCANNING TUNNELING MICROSCOPIC INVESTIGATION OF N-SI(111) [J].

ALLONGUE, P ;

COSTAKIELING, V ;

GERISCHER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1009-1018

[2] ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPARED IN NH4F [J].

ALLONGUE, P ;

KIELING, V ;

GERISCHER, H .

ELECTROCHIMICA ACTA, 1995, 40 (10) :1353-1360

[3]

ALLONGUE P, 1995, APPL PHYS LETT, V67, P691

[4]

ALLONGUE P, 1993, J ELECTROCHEM SOC, V140, P1019

[5]

ALLONGUE P, 1995, P INT S ADV LUM MAT

[6]

ALLONGUE P, IN PRESS

[7] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[8] PREFERENTIAL PROPAGATION OF PORES DURING THE FORMATION OF POROUS SILICON - A TRANSMISSION ELECTRON-MICROSCOPY STUDY [J].

CHUANG, SF ;

COLLINS, SD ;

SMITH, RL .

APPLIED PHYSICS LETTERS, 1989, 55 (07) :675-677

[9] FORMATION MECHANISM OF POROUS SILICON LAYERS OBTAINED BY ANODIZATION OF MONOCRYSTALLINE N-TYPE SILICON IN HF SOLUTIONS [J].

DUBIN, VM .

SURFACE SCIENCE, 1992, 274 (01) :82-92

[10] CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION [J].

GASPARD, F ;

BSIESY, A ;

LIGEON, M ;

MULLER, F ;

HERINO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) :3043-3046

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