Efficient hole generation above 1019 cm-3 in Mg-doped InGaN/GaN superlattices at room temperature

被引：45

作者：

Kumakura, K ^{[1
]}

Makimoto, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 3AB期

关键词：

p-type; InGaN; acceptor; activation energy; MOVPE; Mg doping; high hole concentrations; InGaN/GaN superlattices;

D O I：

10.1143/JJAP.39.L195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We achieved spatially averaged hole concentrations above 10(19) cm(-3) at room temperature in Mg-doped InxGa1-xN/GaN (4nm/4nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 x 10(19) cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

引用

页码：L195 / L196

页数：2

共 14 条

[11] Characteristics of InxGa1-xN/GaN grown by LPMOVPE with the variation of growth temperature [J].