Characteristics of InxGa1-xN/GaN grown by LPMOVPE with the variation of growth temperature

We have studied the growth of InxGa1-xN/GaN on (0 0 0 1) sapphire substrates. The films were grown in a horizontal MOVPE reactor at the reduced pressure of 100 Torr. In composition, x in InxGa1-xN/GaN grown at 810 degrees C determined by the DCXRD is 0.08 and 0.13 for 770 degrees C. The FWHMs of the DCXRD for (0 0 0 2) diffraction from the In0.08Ga0.92N and In0.13Ga0.87N are 11 arcmin and 9 arcmin, respectively, whose difference is considered to be resulted from In dissociation, In addition, we confirmed that the thermal pit density of In0.08Ga0.92N was higher than that of In0.13Ga0.87N With the SEM observation. The carrier concentration and mobility of In0.08Ga0.92N are 3 x 10(18)/cm(3) and 47 cm(2)/V s, and those of In0.13Ga0.87N are 9 x 10(18)/cm(3) and 70 cm(2)/V s, respectively. In spite of the lower carrier concentration, the mobility of In0.08Ga0.92N is lower than that of In0.13Ga0.87N which is considered to be due to the higher defect density of In0.08Ga0.92N than that of In0.13Ga0.87N as can be seen from the result of DCXRD, The FWHMs of band-edge emission peak measured by PL at room temperature were 110 meV at 395 nm for In0.08Ga0.92N and 120 meV at 410 nm for In0.13Ga0.87N. The In composition in InGaN increased as the growth temperature decreased, and In was still dissociated at 770 degrees C. Some high-quality InGaN films were grown on GaN films compared with the recent results of others.