ZN-DOPED INGNN GROWTH AND INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES

被引：79

作者：

NAKAMURA, S

机构：

[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Anan, Tokushima, 774, 491 Oka, Kaminaka

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91163-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-power InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the output power of 1.5 mW at a forward current of 20 mA were fabricated successfully for the first time. This value of output power was the highest ever reported for blue LEDs. As an active layer, a Zn-doped InGaN layer was used for these DH LEDs. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6 V at 20 mA.

引用

页码：911 / 917

页数：7

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