Surface transfer doping of semiconductors

被引：274

作者：

Chen, Wei ^{[1
,2
]}

Qi, Dongchen ^{[1
]}

Gao, Xingyu ^{[1
]}

Wee, Andrew Thye Shen ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

PROGRESS IN SURFACE SCIENCE | 2009年 / 84卷 / 9-10期

关键词：

Surface transfer doping; Synchrotron; Photoemission; Diamond; Epitaxial graphene; Organic thin film; Interface; Charge transfer; ASSEMBLING DIPOLE MOLECULES; PHTHALOCYANINE THIN-FILMS; MASSLESS DIRAC FERMIONS; ENERGY-LEVEL ALIGNMENT; INDIUM TIN OXIDE; ELECTRONIC-STRUCTURE; COPPER PHTHALOCYANINE; CHARGE-TRANSFER; HOLE-INJECTION; ORGANIC HETEROJUNCTION;

D O I：

10.1016/j.progsurf.2009.06.002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface transfer doping relies on charge separation at interfaces, and represents a valuable tool for the controlled and nondestructive doping of nanostructured materials or organic semiconductors at the nanometer-scale. It cannot be easily achieved by the conventional implantation process with energetic ions. Surface transfer doping can effectively dope semiconductors and nanostructures at relatively low cost, thereby facilitating the development of organic and nanoelectronics. The aim of this review is to highlight recent advances of surface transfer doping of semiconductors. Special focus is given to the effective doping of diamond, epitaxial graphene thermally grown on SiC, and organic semiconductors. The doping mechanism of various semiconductors and their possible applications in nanoelectronic devices will be discussed, including the interfacial charge transfer and the energy level alignment mechanisms. (c) 2009 Elsevier Ltd. All rights reserved.

引用

页码：279 / 321

页数：43

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