Multiple-beam interference lithography with electron beam written gratings

被引:54
作者
Solak, HH [1 ]
David, C
Gobrecht, J
Wang, L
Cerrina, F
机构
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词
D O I
10.1116/1.1518015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interference lithography with multiple beams provides two-dimensional periodic patterns in a single exposure step. It is possible to obtain various symmetries and shapes such as sparse hole arrays or dots on a hexagonal grid. However, when the number of interfering beams exceeds three, the intensity pattern depends strongly on the relative phases of the beams. In this article we show that this problem can be overcome with a scheme where transmission diffraction gratings written on a single substrate create the interfering beams possessing the required phase relations. The relative phases of the diffracted beams are controlled by the relative positions of the gratings in the substrate plane. We used electron beam lithography with an interferometrically controlled stage to obtain the required precise placement of the gratings. This method enabled us to produce hexagonal and square arrays of holes where we used three and four beam configurations, respectively. Moreover, we created sparse. hole arrays that have hexagonal and square symmetries with six and eight beam interference. The experiments were carried out in the extreme ultraviolet region with synchrotron radiation and with laser light in the visible spectrum. The technique requires spatially coherent light but it is achromatic and it is not sensitive to small errors in the alignment of the incoming beam. (C) 2002 American Vacuum Society.
引用
收藏
页码:2844 / 2848
页数:5
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