The role of threading dislocations in the physical properties of GaN and its alloys

被引:205
作者
Speck, JS [1 ]
Rosner, SJ
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Hewlett Packard Labs, Palo Alto, CA 94303 USA
关键词
gallium nitride; extended defects; threading dislocations; non-radiative recombination; deep levels; traps; carrier scattering; leakage;
D O I
10.1016/S0921-4526(99)00399-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper, we review progress on understanding the role of threading dislocations (TDs) in the physical properties of GaN and its alloys. A growing body of work provides compelling evidence that TDs in the group-III nitrides behave as non-radiative recombination centers, have energy levels in the otherwise forbidden energy gap, act as charged scattering centers in doped materials, and provide a leakage current pathway. In comparison with conventional III-V semiconductors, the relatively small minority carrier diffusion length L-d ( similar to 50 nm) in the III-nitrides, combined with favorable TD geometries, minimize dislocation-related degradation. The small value of L-d also allows for appreciable optical emission in materials with TD densities as high as 10(10) cm(-2). (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:24 / 32
页数:9
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