Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering

被引：85

作者：

Song, PK

Akao, H

Kamei, M

Shigesato, Y

Yasui, I

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[2] Aoyama Gakuin Univ, Coll Sci & Engn, Dept Chem, Setagaya Ku, Tokyo 1578572, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

amorphous tin-doped indium oxide; crystallization; electrical properties; dc magnetron sputtering; low substrate temperature;

D O I：

10.1143/JJAP.38.5224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tin-doped and undoped amorphus indium oxide films were prepared by de magnetron sputtering without substrate heating at relatively high total gas pressures and relatively large target-substrate distance. The structural and electrical properties of these films were investigated by X-ray diffraction and Hall-effect measurements. The amorphous tin-doped indium oxide (a-ITO) films were crystallized at a temperature about 30 degrees C higher than that for amorphous indium oxide (a-IO) films.

引用

页码：5224 / 5226

页数：3

共 9 条

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