Luminescence properties of ErO-codoped III-V semiconductors grown by organometallic vapor phase epitaxy

被引：37

作者：

Fujiwara, Y ^{[1
]}

Kawamoto, T ^{[1
]}

Koide, T ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

erbium; oxygen; GaAs; InP;

D O I：

10.1016/S0921-4526(99)00645-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have grown Er,O-codoped GaAs and InP by organometallic vapor phase epitaxy (OMVPE) and investigated the growth condition dependences of the photoluminescence (PL) spectra due to intra-4f shell transitions of Er. The codoping of Er and oxygen (O) is performed using an O-containing Er source either with or without an additional O-2 flow. In GaAs, the addition of O-2 to the growth ambient is quite effective for the formation of an Er-2O center. The dependence of the PL spectra on growth temperature reveals the existence of a threshold growth temperature above which the formation of the Er-2O center is greatly suppressed. In Er-doped InP grown with a small amount of O-2, several extremely sharp emission lines are newly observed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：770 / 773

页数：4

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