Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP

被引：7

作者：

Fujiwara, Y ^{[1
]}

Ito, T ^{[1
]}

Ofuchi, H ^{[1
]}

Tsuchiya, J ^{[1
]}

Tanigawa, A ^{[1
]}

Tabuchi, M ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully observed radiant Er-related low-temperature photoluminescence (PL) dominated by numerous extremely sharp emission lines due to the intra-4f shell transitions of Er3+ ions in Er-doped GaP (GaP:Er) grown by OMVPE with TBP. The intensity of the emission lines depended strongly on the growth temperature, the Er concentration and the reactor pressure, indicating coexistence of various Er-related luminescence centers in the samples. The fluorescence-detected EXAFS analysis on the samples revealed clearly that the majority of Er atoms doped are substitutionally incorporated into Ga sites in the GaP lattice. Effects of In-addition to GaP:Er have also been investigated.

引用

页码：199 / 202

页数：4

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