Laser emission from GaN photonic crystals

被引：34

作者：

Chang, Li-Ming ^{[1
]}

Hou, Chia-Hung

Ting, Yu-Chen

Chen, Chii-Chang

Hsu, Che-Lung

Chang, Jenq-Yang

Lee, Chien-Chieh

Chen, Guan-Ting

Chyi, Jen-Inn

机构：

[1] Natl Cent Univ, Inst Opt Sci, Jhongli 320, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Jhongli 320, Taiwan

[3] Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

D O I：

10.1063/1.2236107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, photonic crystals have been designed, fabricated, and characterized in GaN bulk materials. The energy dependent measurement showed that the emission peak width can be significantly reduced as the pumping pulse energy was larger than 0.7 mu J at room temperature. The mode at the wavelength of 371 nm emitted from the defect due to the structure disorder unintentionally introduced during the fabrication process of the GaN photonic crystals can be obtained. (c) 2006 American Institute of Physics.

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页数：3

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