Chemical mechanical polishing of silver damascene structures

被引：14

作者：

Hauder, M ^{[1
]}

Gstöttner, J ^{[1
]}

Gao, L ^{[1
]}

Schmitt-Landsiedel, D ^{[1
]}

机构：

[1] Tech Univ Munich, LTE, Inst Tech Elect, D-80290 Munich, Germany

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

Ag metallization; sputtering; chemical mechanical polishing; sub micron;

D O I：

10.1016/S0167-9317(02)00772-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sub micron silver lines are patterned by applying chemical mechanical polishing (CMP). Dry etched SiO2 trenches are filled with Ag by sputtering before removing surplus Ag by several CMP methods. Techniques using a slurry which focus on mechanical polishing have a problem in achieving planar removal of the metal. But with mainly chemical polishing a homogenous removal with proper embedded lines is possible. Thermally robust and smooth Ag metallization lines are the result of such a process. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：73 / 79

页数：7

共 8 条

[1] Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient [J].

Alford, TL ;

Adams, D ;

Laursen, T ;

Ullrich, BM .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3251-3253

[2]

[Anonymous], 2001, INT TECHNOLOGY ROADM

[3] Electromigration resistance of sputtered silver lines using different patterning techniques [J].

Hauder, M ;

Hansch, W ;

Gstöttner, J ;

Schmitt-Landsiedel, D .

MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) :51-57

[4] Scaling properties and electromigration resistance of sputtered Ag metallization lines [J].

Hauder, M ;

Gstöttner, J ;

Hansch, W ;

Schmitt-Landsiedel, D .

APPLIED PHYSICS LETTERS, 2001, 78 (06) :838-840

[5]

HAUDER M, 2002, IN PRESS SENSORS A A

[6] Silver metallization for advanced interconnects [J].

Manepalli, R ;

Stepaniak, F ;

Bidstrup-Allen, SA ;

Kohl, PA .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 1999, 22 (01) :4-8

[7] Reactive ion etch of patterned and blanket silver thin films in Cl2/O2 and O2 glow discharges [J].

Nguyen, P ;

Zeng, YX ;

Alford, TL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :2204-2209

[8]

USHIKU Y, 1993, S VLSI TECHN KYOT JA, P121

← 1 →