Defect structure of high resistive CdTe:In prepared by vertical gradient freeze method

被引：22

作者：

Franc, J ^{[1
]}

Babentsov, V

Fiederle, M

Belas, E

Grill, R

Benz, KW

Höschl, P

机构：

[1] Charles Univ, Inst Phys, Fac Math & Phys, CZ-12116 Prague 2, Czech Republic

[2] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 03期

关键词：

defect levels; self-compensation; semiinsulating CdTe;

D O I：

10.1109/TNS.2004.829658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by Vertical Gradient Freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its compexes) is discussed.

引用

页码：1176 / 1181

页数：6

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