Detailed characterization of Unibond material

被引：7

作者：

Munteanu, D

Maleville, C

Cristoloveanu, S

Moriceau, H

Aspar, B

Raynaud, C

Faynot, O

Pelloie, JL

AubertonHerve, AJ

机构：

[1] Lab. Phys. Composants S., ENSERG, 38016 Grenoble Cedex 1

[2] LETI-CEA/DMITEC, F38054 Grenoble Cedex 9

[3] LETI-CEA/DMEL, F38054 Grenoble Cedex 9

[4] SOITEC, Site ASTEC, 38041 Grenoble Cedex

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00088-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unibond wafers are evaluated by optical, physical (TEM, AFM, X-ray), chemical (Secco and HF etch), and electrical (Psi-MOSFET, Hall, mu-PCD) methods. The low density of defects, the high quality of oxide and interfaces, and the excellent electrical properties (carrier mobility and lifetime) are key properties. The parameters extracted from MOS test devices confirm that Unibond is a very suitable technology for thin-film CMOS circuits.

引用

页码：395 / 398

页数：4

共 9 条

[1]

ASPAR B, 1996, ELECTROCHEM SOC SERI, V963, P99

[2] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].