Raman study of BaFe12O19 thin films

被引:48
作者
Kreisel, J
Pignard, S
Vincent, H
Sénateur, JP
Lucazeau, G
机构
[1] Inst Natl Polytech Grenoble, ENSPG, Mat & Genie Phys Lab, CNRS,UMR 5628, F-38402 St Martin Dheres, France
[2] Inst Natl Polytech Grenoble, ENSEEG, Lab Electrochim & Physicochim Mat & Interfaces, CNRS,UMR 5631, F-38402 St Martin Dheres, France
关键词
D O I
10.1063/1.122124
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on Raman spectra of BaFe12O19 thin films. These thin films have been deposited by injection chemical vapor deposition on three different substrates: Al2O3 (001), Gd3Ga5O12 (111), and Si (100). The observed Raman-active vibrations of the films are compared with recently published Raman spectra from bulk compounds. Surprisingly, we observed nearly the same spectra for all the films, although x-ray diffraction indicates polycrystalline (Si), textured (Gd3Ga5O12), and epitaxial (Al2O3) structure. We interpret these results by supposing the coexistence of well oriented regions and randomly oriented microcrystallites, which are not detectable by x-ray diffraction. Furthermore, by Raman spectroscopy we identified an additional phase for the films deposited on Al2O3 which has not been observed by x-ray diffraction either. (C) 1998 American Institute of Physics, [S0003-6951(98)03635-3].
引用
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页码:1194 / 1196
页数:3
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