Surface islands and their elastic interaction with adatoms

被引:11
作者
Kouris, D [1 ]
Peralta, A [1 ]
Sieradzki, K [1 ]
机构
[1] Arizona State Univ, Dept Mech & Aerosp Engn, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
adatoms; elastic energy; Green's function; islands; molecular dynamic simulations; embedded atom method; steps; stress; thin film growth;
D O I
10.1016/S0039-6028(99)01091-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We describe the elastic interaction between adatoms on a (001) bcc surface and monolayer-high two- and three-dimensional islands, within the general context of thin-film growth. A discrete harmonic model based on the concepts of eigenstrain and surface stress yields the elastic field owing to the presence of adatoms and islands. Adatoms can be attracted or repelled by islands, depending on the sign of the interaction energy. Our results indicate that the elastic field does not generally favor a flat two-dimensional growth mode for homoepitaxy, or heteroepitaxy, when the overlayer is in compression. Based on elastic interactions alone, our results indicate that, in heteroepitaxy, two-dimensional step-flow growth becomes likely only for overlayers in tension. The model used in the study offers substantial advantages in computational efficiency when compared with atomic simulations that are the norm in this field. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:420 / 429
页数:10
相关论文
共 24 条
[1]   SEMIEMPIRICAL CALCULATION OF SOLID-SURFACE TENSIONS IN BODY-CENTERED CUBIC TRANSITION-METALS [J].
ACKLAND, GJ ;
FINNIS, MW .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 54 (02) :301-315
[2]   STRANSKI-KRASTANOV GROWTH OF AG ON AU(111) ELECTRODES [J].
CORCORAN, SG ;
CHAKAROVA, GS ;
SIERADZKI, K .
PHYSICAL REVIEW LETTERS, 1993, 71 (10) :1585-1588
[3]   NEW INSTABILITY IN MOLECULAR-BEAM EPITAXY [J].
DUPORT, C ;
NOZIERES, P ;
VILLAIN, J .
PHYSICAL REVIEW LETTERS, 1995, 74 (01) :134-137
[4]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[5]   ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216
[6]  
FUNG Y. C., 1965, Foundations of solid mechanics
[7]   THIN-FILM GROWTH MODES, WETTING AND CLUSTER NUCLEATION [J].
GRABOW, MH ;
GILMER, GH .
SURFACE SCIENCE, 1988, 194 (03) :333-346
[8]   THE EIGENSTRAIN METHOD FOR SMALL DEFECTS IN A LATTICE [J].
KING, KC ;
MURA, T .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (08) :1019-1030
[9]  
KOURIS D, 1999, ASME, V121, P129
[10]   REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].
KUNKEL, R ;
POELSEMA, B ;
VERHEIJ, LK ;
COMSA, G .
PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736