Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells

被引：17

作者：

Feng, W

Chen, F

Cheng, WQ

Huang, Q

Zhou, JM

机构：

[1] Institute of Physics, Chinese Academy of Sciences

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.119791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature growth and subsequent rapid thermal anneal were used to intermix Al and Ga atoms in AlGaAs/GaAs multiple quantum wells (QWs). The intermixed samples were characterized by photoluminescence (PL) spectroscopy, and the observed blue shifts in PL energies are interpreted as the result of modification of the QW shape due to the enhanced Al-Ga interdiffusion in the samples. The enhancement of interdiffusion was found to be strongly dependent on the growth and annealing conditions. In addition, the saturation behavior of Al-Ga interdiffusion was also observed. (C) 1997 American Institute of Physics.

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页码：1676 / 1678

页数：3

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