Surface termination of GaAs(001) by Sb dimers

被引：5

作者：

Maeda, F

Watanabe, Y

Oshima, M

机构：

[1] NTT Interdisc. Research Laboratories, Musashino-shi, Tokyo 180, 3-9-11, Midoricho

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

angle resolved photoemission; antimony; energy dissipation; epitaxy; gallium arsenide; low index single crystal surfaces; metal-semiconductor nonmagnetic heterostructures; soft X-ray photoelectron spectroscopy;

D O I：

10.1016/0039-6028(96)00219-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Angle-integrated and angle-resolved (AR) photoelectron spectroscopy (PES) experiments were performed on GaAs(001) 2 x 4 Sb surfaces. The results of angle-integrated PES show that only Sb atoms lie on the GaAs surface and that they bond to Ga atoms. ARPES experiments revealed a surface state whose dispersion is very similar to the As dimer dangling bond surface stare of As-terminated GaAs(001). These results suggested that Sb dimers terminate GaAs surfaces and bond to Ga atoms of the second top atomic layer.

引用

页码：540 / 544

页数：5

共 13 条

[1]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[2] PHOTOELECTRON-SPECTROSCOPY STUDY OF GA 3D AND AS 3D CORE LEVELS ON MBE-GROWN GAAS-SURFACES [J].

LARIVE, M ;

JEZEQUEL, G ;

LANDESMAN, JP ;

SOLAL, F ;

NAGLE, J ;

LEPINE, B ;

TALEBIBRAHIMI, A ;

INDLEKOFER, G ;

MARCADET, X .

SURFACE SCIENCE, 1994, 304 (03) :298-308

[3]

LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[4] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE [J].

LARSEN, PK ;

NEAVE, JH ;

VANDERVEEN, JF ;

DOBSON, PJ ;

JOYCE, BA .

PHYSICAL REVIEW B, 1983, 27 (08) :4966-4977

[5] ANGLE-RESOLVED PHOTOEMISSION FROM AS-STABLE GAAS (001) SURFACES PREPARED BY MBE [J].

LARSEN, PK ;

NEAVE, JH ;

JOYCE, BA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (02) :167-192

[6] SB-INDUCED SURFACE RECONSTRUCTION ON GAAS(001) [J].

MAEDA, F ;

WATANABE, Y ;

OSHIMA, M .

PHYSICAL REVIEW B, 1993, 48 (19) :14733-14736

[7]

MAEDA F, UNPUB REV SCI INSTRU

[8]

MAEDA F, UNPUB J ELECTR SPECT

[9] GEOMETRIC AND ELECTRONIC-STRUCTURE OF ANTIMONY ON THE GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

MARTENSSON, P ;

FEENSTRA, RM .

PHYSICAL REVIEW B, 1989, 39 (11) :7744-7753

[10]

SHIBAYAMA A, 1988, REV SCI INSTRUM, V60, P1779

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