SB-INDUCED SURFACE RECONSTRUCTION ON GAAS(001)

被引：54

作者：

MAEDA, F

WATANABE, Y

OSHIMA, M

机构：

[1] NTT Interdisciplinary Research Laboratories, Musashino-shi, Tokyo 180

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.48.14733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reconstructed surfaces on Sb/GaAs(001) have been investigated in situ by reflection high-energy electron diffraction (RHEED) and core-level photoelectron spectroscopy by heating a sample prepared by depositing Sb on an As-terminated GaAs(001) surface at room temperature (RT). Before Sb desorption, the halo RHEED pattern changes into 1 X 4, 1 X 3, and 2 X 4 patterns from RT to 560-degrees-C, which is in contrast to Sb/GaAs(110) that shows only a 1 X 1 pattern. It is found that the GaAs surface with a 2 X 4 pattern is terminated by a monolayer of Sb, and that these superstructure changes are caused by As atom desorption followed by Sb atom substitution.

引用

页码：14733 / 14736

页数：4

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