Recent progress in processing and properties of ZnO

被引：353

作者：

Pearton, SJ

Norton, DP

Ip, K

Heo, YW

Steiner, T

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] USAF, Off Sci Res, Arlington, VA 22217 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/S0749-6036(03)00093-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition metal-doped ZnO. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：3 / 32

页数：30

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