Influence of size factors in the electroluminescent emission of large area GaAs IRED's

被引:4
作者
Reyna, RF
Marti, A
Algora, C
Maroto, JC
Araujo, GL
机构
[1] Departamento Electrönica Fïsica, E. T. S. I. T., Ciudad Universitaria S/n
关键词
D O I
10.1109/16.595948
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model to explain the current dependence of the external quantum efficiency of GaAs LED's is presented. First, this efficiency increases with the current due to the relative increase of the diffusion current in the total current; then, it remains constant since the diffusion current becomes dominant and finally, decreases due to series resistance effects, in absence of thermal effects.
引用
收藏
页码:1174 / 1176
页数:3
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