Coexistence of geminate and non-geminate recombination in a-Si:H and a-Ge:H observed by quadrature frequency resolved spectroscopy

被引：15

作者：

Aoki, T ^{[1
]}

Shimizu, T

Komedoori, S

Kobayashi, S

Shimakawa, K

机构：

[1] Tokyo Inst Polytech, Dept Elect & Comp Engn, Atsugi, Kanagawa 2430297, Japan

[2] Tokyo Inst Polytech, Joint Res Ctr Hightechnol, Atsugi, Kanagawa 2430297, Japan

[3] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.03.018

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In addition to well known double-peak lifetimes (similar toms and similar tomus) of photoluminescence (PL) observed at low temperatures in a-Si:H and a-Ge:H, a third peak at similar to0.1-160 s has been discovered with quadrature frequency resolved spectroscopy (QFRS), even under the geminate recombination condition. Steady-state carrier density deduced from the third component of PL gives the sublinear dependence of carrier generation rate G, which is correlated with the intensity of light-induced electron spin resonance (LESR). Coexistence of geminate (involving exciton-like) and non-geminate recombinations is suggested in the present materials. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：456 / 459

页数：4

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