Unique optical properties of AlGaN alloys and related ultraviolet emitters

被引：318

作者：

Nam, KB ^{[1
]}

Li, J ^{[1
]}

Nakarmi, ML ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1765208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep UV photoluminescence spectroscopy has been employed to study the optical properties of AlxGa1-xN alloys (0less than or equal toxless than or equal to1). The emission intensity with polarization of Eperpendicular toc and the degree of polarization were found to decrease with increasing x. This is a consequence of the fact that the dominant band edge emission in GaN (AlN) is with polarization of Eperpendicular toc(Eparallel toc). Our experimental results suggest that the decreased emission efficiency in AlxGa1-xN alloys and related UV emitters could also be related with their unique polarization property, i.e., the intensity of light emission with polarization of Eperpendicular toc decreases with x. It is thus concluded that UV emitters with AlGaN alloys as active layers have very different properties from InGaN and other semiconductor emitters. (C) 2004 Institute of Physics.

引用

页码：5264 / 5266

页数：3

共 19 条

[1] Sub-milliwatt power III-N light emitting diodes at 285 nm [J].

Adivarahan, V ;

Zhang, JP ;

Chitnis, A ;

Shuai, W ;

Sun, J ;

Pachipulusu, R ;

Shatalov, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B) :L435-L436

[2] 324 nm light emitting diodes with milliwatt powers [J].

Chitnis, A ;

Zhang, JP ;

Adivarahan, V ;

Shuai, W ;

Sun, J ;

Shatalov, M ;

Yang, JW ;

Simin, G ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L450-L451

[3] Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations [J].

Coli, G ;

Bajaj, KK ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2002, 80 (16) :2907-2909

[4] Linewidths of excitonic luminescence transitions in AlGaN alloys [J].

Coli, G ;

Bajaj, KK ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1829-1831

[5] InGaN/GaN quantum well interconnected microdisk light emitting diodes [J].

Jin, SX ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 77 (20) :3236-3238

[6] Time-resolved photoluminescence studies of AlxGa1-xN alloys [J].

Kim, HS ;

Mair, RA ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1252-1254

[7] The band-gap bowing of AlxGa1-xN alloys [J].

Lee, SR ;

Wright, AF ;

Crawford, MH ;

Petersen, GA ;

Han, J ;

Biefeld, RM .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3344-3346

[8] Band structure and fundamental optical transitions in wurtzite AlN [J].

Li, J ;

Nam, KB ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX ;

Carrier, P ;

Wei, SH .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5163-5165

[9] Band-edge photoluminescence of AIN epilayers [J].

Li, J ;

Nam, KB ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3365-3367

[10] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

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