Copper-related defects in silicon

被引：6

作者：

Estreicher, SK ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

copper; gettering; silicon; theory;

D O I：

10.1016/S0921-4526(99)00496-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：424 / 428

页数：5

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