Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

被引:98
作者
Antoniadis, D. A.
Aberg, I.
Ni Chleirigh, C.
Nayfeh, O. M.
Khakifirooz, A.
Hoyt, J. L.
机构
[1] MIT, Dept Comp Sci & Elect Engn, Cambridge, MA 02139 USA
[2] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
关键词
D O I
10.1147/rd.504.0363
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A simple model that links MOSFET performance, in the,form of intrinsic switch delay, to effective carrier velocity in the channel is developed and fitted to historical data. It is shown that nearly continuous carrier velocity increase, most recently via the introduction of process-induced strain, has been responsible,for the device performance increase commensurately with dimensional scaling. The paper further examines channel material innovations that chill be required in order to maintain continued commensurate scaling beyond what can be achieved with process-induced strain, and discusses some of the technological tradeoffs that will have to be faced for their introduction.
引用
收藏
页码:363 / 376
页数:14
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