Electrical conduction properties of sputter-grown (Ba, Sr)TiO3 thin films having IrO2 electrodes

被引:22
作者
Shin, JC [1 ]
Hwang, CS [1 ]
Kim, HJ [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
关键词
D O I
10.1063/1.126111
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical conduction behavior of sputter-grown (Ba, Sr)TiO3(BST) thin films having IrO2 electrodes were studied under the assumption of a fully accumulated film. In the film-thickness range studied (40-80 nm), the dielectric constants and their electric field dependencies were found to be independent of the film thickness. Contrary to similar BST films grown on Pt electrodes, the leakage current density decreased with increasing film thickness at a given field. The phenomena were explained from the electric-field depression effect inside the film due to the accumulated negative space charges in the films. The leakage current conductions were controlled by the Poole-Frenkel mechanism in the low field whereas it changed to thermionic field emission in the high-field region. The dielectric constant obtained from the Poole-Frenkel fitting was approximately 300, which was in a qualitative agreement with the value obtained from the low-frequency capacitance measurement. The calculated interfacial potential-barrier height at zero volt and effective mass of electrons were 1.03 eV and 0.06m(0), respectively, from the thermionic field emission fittings. (C) 2000 American Institute of Physics. [S0003-6951(00)01112-8].
引用
收藏
页码:1609 / 1611
页数:3
相关论文
共 11 条
[1]  
CHO HJ, 1997, JPN J APPL PHYS PT 1, V36, P197
[2]  
HESTO P, 1986, INSTABILITIES SILICO, P304
[3]   All perovskite Capacitor (APEC) technology for (Ba,Sr)TiO3 capacitor scaling toward 0.10μm stacked DRAMs [J].
Hieda, K ;
Eguchi, K ;
Fukushima, N ;
Aoyama, T ;
Natori, K ;
Kiyotoshi, M ;
Yamazaki, S ;
Izuha, M ;
Niwa, S ;
Fukuzumi, Y ;
Ishibashi, Y ;
Kohyama, Y ;
Arikado, T ;
Okumura, K .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :807-810
[4]   Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Lee, KH ;
Cho, HJ ;
Hideki, H ;
Kim, WD ;
Lee, SI ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :287-295
[5]   A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Kim, JW ;
Lee, KH ;
Cho, HJ ;
Horii, H ;
Kim, WD ;
Lee, SI ;
Roh, YB ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713
[6]   (Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.: A review on the process integration [J].
Hwang, CS .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3) :178-190
[7]   (BaSr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications [J].
Nagaraj, B ;
Sawhney, T ;
Perusse, S ;
Aggarwal, S ;
Ramesh, R ;
Kaushik, VS ;
Zafar, S ;
Jones, RE ;
Lee, JH ;
Balu, V ;
Lee, J .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3194-3196
[8]   Thickness dependence of the effective dielectric constant in a thin film capacitor [J].
Natori, K ;
Otani, D ;
Sano, N .
APPLIED PHYSICS LETTERS, 1998, 73 (05) :632-634
[9]   Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films [J].
Shin, JC ;
Park, J ;
Hwang, CS ;
Kim, HJ .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :506-513
[10]   RICHARDSON-SCHOTTKY EFFECT IN SOLIDS [J].
SIMMONS, JG .
PHYSICAL REVIEW LETTERS, 1965, 15 (25) :967-&