Precursor chemistry of Group 13 nitrides XV:: synthesis and structure of adduct stabilized bis- and trisazides of indium;: thermoanalytic characterisation of py3In(N3)3

被引:13
作者
Fischer, RA [1 ]
Sussek, H
Parala, H
Pritzkow, H
机构
[1] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, D-44780 Bochum, Germany
[2] Univ Heidelberg, Inst Anorgan Chem, D-69120 Heidelberg, Germany
关键词
indium azides; indium nitride; single source precursor;
D O I
10.1016/S0022-328X(99)00515-X
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The synthesis and properties of {(X)(2)In[(CH2)(3)NMe2)]}(2) (1: X = Br, 2: X = N-3) and (terpy)In(N-3)(2)Y (3: Y = N-3; 4. Y = eta(2)-O2C(CH2)(2)CH2OH) are reported. Compounds 1 and 4 have been characterized by single crystal X-ray diffraction studies. Compound 2 represents the first adduct stabilized and volatile covalent bis azide compound of indium. The pyrolysis of the trisazide py(3)In(N-3)(3) (5) was studied by TGA and DSC showing three distinct steps between 100 and 250 degrees C according to loss of pyridine. Due to the low thermal stability of InN the controlled detonation of pure 5 and mixtures of 5 with (Et3N)Ga(N-3)(3) yields In metal rather than InN or an In1-xGaxN alloy. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:205 / 211
页数:7
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