Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

被引:167
作者
Batra, Rohit [1 ]
Tran Doan Huan [1 ]
Jones, Jacob L. [2 ]
Rossetti, George, Jr. [1 ]
Ramprasad, Rampi [1 ]
机构
[1] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
CRYSTAL-STRUCTURE; GATE STACKS; ZIRCONIA; OXIDES; FILMS;
D O I
10.1021/acs.jpcc.6b11972
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surprising ferroelectricity displayed by hafnia thin films has been attributed to a metastable polar orthorhombic (Pca2(1)) phase. Nevertheless, the conditions under which this (or another competing) ferroelectric phase may be stabilized remain unresolved. It has been hypothesized that a variety of factors, including strain, grain size, electric field, impurities and dopants, may contribute to the observed ferroelectricity. Here, we use first-principles computations to examine the influence of mechanical and electrical boundary conditions (i.e., strain and electric field) on the relative stability of a variety of relevant nonpolar and polar phases of hafnia. We find that although strain or electric field, independently, do not lead to a ferroelectric phase, the combined influence of in-plane equibiaxial deformation and electric field results in the emergence of the polar Pca2(1) structure as the equilibrium phase. The results provide insights for better controlling the ferroelectric characteristics of hafnia thin films by adjusting the growth conditions and electrical history.
引用
收藏
页码:4139 / 4145
页数:7
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