Stark effect in shallow impurities in Si

被引：37

作者：

Smit, GDJ ^{[1
]}

Rogge, S ^{[1
]}

Caro, J ^{[1
]}

Klapwijk, TM ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.70.035206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the band structure into account. A description as hydrogenlike impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.

引用

页码：035206 / 1

页数：10

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