Numerical modeling of laser induced phase transitions in silicon

被引：19

作者：

Mittiga, A

Fornarini, L

Carluccio, R

机构：

[1] ENEA, I-00060 Rome, Italy

[2] ENEA, I-00044 Rome, Italy

[3] CNR, IESS, I-00156 Rome, Italy

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

A-Si laser recrystallization; nucleation; phase transitions modeling;

D O I：

10.1016/S0169-4332(99)00436-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new one-dimensional numerical model of laser induced phase transitions in silicon is presented, In addition to the heat flow phenomena, it includes a first order description of the nucleation and growth of the new grains. The simulations are used to assess both the relevance of different nucleation mechanisms and the numerical values of some fundamental parameters. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：112 / 117

页数：6

相关论文

共 14 条

[1] PHASE-DIAGRAM OF SILICON BY MOLECULAR-DYNAMICS [J].

BROUGHTON, JQ ;

LI, XP .

PHYSICAL REVIEW B, 1987, 35 (17) :9120-9127

[2] RAPID MELTING AND REGROWTH VELOCITIES IN SILICON HEATED BY ULTRAVIOLET PICOSECOND LASER-PULSES [J].

BUCKSBAUM, PH ;

BOKOR, J .

PHYSICAL REVIEW LETTERS, 1984, 53 (02) :182-185

[3]

Christian JW, 1975, THEORY TRANSFORMATIO

[4] A THERMAL DESCRIPTION OF THE MELTING OF C-SILICON AND A-SILICON UNDER PULSED EXCIMER LASERS [J].

DEUNAMUNO, S ;

FOGARASSY, E .

APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :1-11

[5] UNDERCOOLING OF MOLTEN SILICON [J].

DEVAUD, G ;

TURNBULL, D .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :844-845

[6] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

[7] SOLIDIFICATION OF HIGHLY UNDERCOOLED SI AND GE DROPLETS [J].

EVANS, PV ;

DEVAUD, G ;

KELLY, TF ;

KIM, YW .

ACTA METALLURGICA ET MATERIALIA, 1990, 38 (05) :719-726

[8] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].

IM, JS ;

KIM, HJ ;

THOMPSON, MO .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1969-1971

[9] TRANSIENT NUCLEATION IN CONDENSED SYSTEMS [J].

KELTON, KF ;

GREER, AL ;

THOMPSON, CV .

JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (12) :6261-6276

[10] STRUCTURAL, BONDING, DYNAMIC, AND ELECTRONIC-PROPERTIES OF LIQUID SILICON - AN ABINITIO MOLECULAR-DYNAMICS STUDY [J].

STICH, I ;

CAR, R ;

PARRINELLO, M .

PHYSICAL REVIEW B, 1991, 44 (09) :4262-4274