Single crystal silicon nano-wire piezoresistors for mechanical sensors

被引:86
作者
Toriyama, T
Tanimoto, Y
Sugiyama, S
机构
[1] New Energy & Ind Technol Dev Org, Tokyo 1706028, Japan
[2] Ritsumeikan Univ, Fac Sci & Engn, Shiga 5258577, Japan
关键词
nano-wire; piezoresistance; p-type silicon;
D O I
10.1109/JMEMS.2002.802905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A p-type silicon (Si) nano-wire piezoresistor, whose minimum cross-sectional area is 53 nm x 53 nm, was fabricated by combination of thermal diffusion, EB (electron beam) direct writing and RIE (reactive ion etching). The maximum value of longitudinal piezoresistance coefficient pi(l[011]) of the Si nano-wire piezoresistor was found to be 48 x 10(-5) (1/MPa) at surface impurity concentration of 5 x 10(19) (cm(-3)) and it has enough sensitivity for mechanical sensor applications. The longitudinal piezoresistance coefficient pi(l[011]) of the Si nano-wire piezoresistor increased up to 60% with a decrease in the cross sectional area, while transverse piezoresistance coefficient pi(t[011]) decreased with a increase in the aspect ratio of the cross section. These phenomena were briefly investigated based on a hole energy consideration and FEM (finite element method) stress analysis.
引用
收藏
页码:605 / 611
页数:7
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