Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate

被引：26

作者：

Chang, YS

Naritsuka, S

Nishinaga, T

机构：

[1] Department of Electronic Engineering, Graduate School of Engineering, University of Tokyo, Tokyo 113, 7-3-1 Hongo, Bunkyo-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(97)00067-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dependence of epitaxial lateral overgrowth (ELO) of GaAs on Si on the growth temperature of liquid phase epitaxy (LPE) has been studied. It is shown that the ratio of the ELO width to the thickness (ELO ratio) depends strongly on LPE growth temperature. When the growth temperature is chosen as high as 620 degrees C, the ELO ratio equals 5.8. However, when the growth temperature is decreased to 500 degrees C, the ELO ratio is increased to as large as 14. Molten KOH etching showed that only a few pits are present on the ELO layers. It is concluded that by employing low growth temperature, GaAs epitaxial layers with large ELO ratio and with only a few dislocations can be obtained.

引用

页码：630 / 634

页数：5

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