LASER-DIODE-QUALITY INP/SI GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：21

作者：

TACHIKAWA, M

YAMADA, T

SASAKI, T

MORI, H

KADOTA, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 6A期

关键词：

INP/SI; HETEROEPITAXY; VPE; DISLOCATION; STACKING FAULTS; LD/SI;

D O I：

10.1143/JJAP.34.L657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The heteroepitaxial growth of InP/GaAs/Si by hydride vapor phase epitaxy achieves laser diode (LD) device quality. Etch-pit density (EPD) measurements and transmission electron microscopy reveal two kinds of defects, threading dislocations and stacking faults, in the InP layer. Lowering the growth temperature of the direct InP layer on GaAs/Si reduces stacking fault density to the order of 10(4) cm(-2). Room-temperature continuous-wave operation of an InGaAsP 1.5-mu m-wavelength LD fabricated on InP/GaAs/Si confirms its crystal quality.

引用

页码：L657 / L659

页数：3

共 9 条

[1] LOW-THRESHOLD CONTINUOUS-WAVE ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS/GAAS SINGLE QUANTUM-WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES WITH SIO2 BACK COATING [J].