Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors

被引：13

作者：

Wang, SY

Lee, CP

机构：

[1] Department of Electronic Engineering, National Chiao Tung University, Hsinchu

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.366084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

8-12 mu m InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption.:A detectivity about 1 x 10(10) cm Hz(1/2)/W and a peak responsivity of 0.23 A/W at 9 mu m have been obtained for the grating-free devices. (C) 1997 American Institute of Physics.

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页码：2680 / 2683

页数：4

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