BGaInAs alloys lattice matched to GaAs

被引：80

作者：

Geisz, JF ^{[1
]}

Friedman, DJ ^{[1
]}

Olson, JM ^{[1
]}

Kurtz, SR ^{[1
]}

Reedy, RC ^{[1
]}

Swartzlander, AB ^{[1
]}

Keyes, BM ^{[1
]}

Norman, AG ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the epitaxial growth of zinc-blende BxGa1-x-yInyAs and BxGa1-xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1-xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1-x-yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1-yInyAs layer with the same band gap. (C) 2000 American Institute of Physics. [S0003- 6951(00)02711-X].

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页码：1443 / 1445

页数：3

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