Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves

被引：18

作者：

Honda, Y

Iyechika, Y

Maeda, T

Miyake, H

Hiramatsu, K

Sone, H

Sawaki, N

机构：

[1] Sumitomo Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3003294, Japan

[2] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[3] Nagoya Univ, Sch Engn, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 11B期

关键词：

GaN; epitaxial lateral overgrowth (ELO); tungsten (W) mask; hydride vapor phase epitaxy (HVPE); X-ray rocking curves (XRCs); transmission electron microscope (TEM); transmission electron diffraction (TED);

D O I：

10.1143/JJAP.38.L1299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fluctuation of the crystal orientation of epitaxial-lateral-overgrown (ELO) GaN with a tungsten (W) mask is compared to that with a SiO2 mask by means of selected-area transmission electron diffraction (TED) and X-ray rocking curves (XRCs). XRCs of (0004) reflection exhibited three peaks for ELO-GaN on a SiO2 mask, and were confirmed to originate from domains of different c-axis orientation by TED. On the other hand, fluctuation of the c-axis was not observed for ELO-GaN with a W mask. These results indicate that the crystalline quality of ELO-GaN with a W mask is better than that with a SiO2 mask.

引用

页码：L1299 / L1302

页数：4

共 8 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] Selective area growth of GaN using tungsten mask by metalorganic vapor phase epitaxy [J].

Kawaguchi, Y ;

Nambu, S ;

Sone, H ;

Shibata, T ;

Matsushima, H ;

Yamaguchi, M ;

Miyake, H ;

Hiramatsu, K ;

Sawaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (7B) :L845-L848

[3] Present status of InGaN/GaN/AlGaN-based laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :820-825

[4] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

[5] Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy [J].

Nam, OH ;

Bremser, MD ;

Zheleva, TS ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2638-2640

[6] Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth [J].

Sakai, A ;

Sunakawa, H ;

Usui, A .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :481-483

[7] Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy [J].

Sone, H ;

Nambu, S ;

Kawaguchi, Y ;

Yamaguchi, M ;

Miyake, H ;

Hiramatsu, K ;

Iyechika, Y ;

Maeda, T ;

Sawaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4A) :L356-L359

[8] Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy [J].

Usui, A ;

Sunakawa, H ;

Sakai, A ;

Yamaguchi, AA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B) :L899-L902

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