Defect generation statistics in thin gate oxides

被引：12

作者：

Ielmini, D ^{[1
]}

Spinelli, AS

Lacaita, AL

van Duuren, MJ

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Univ Studi Insubria, Dipartimento Matemat & Fis, I-22100 Como, Italy

[3] Ist Nazl Fis Mat, Unita Como, I-22100 Como, Italy

[4] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[5] IFN, CNR, I-20133 Milan, Italy

[6] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 08期

关键词：

defect generation; Flash memories; leakage currents;

D O I：

10.1109/TED.2004.832104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyze data-retention experiments for Flash memory arrays with thin tunnel oxide (t(ox) = 5 nm). These samples show an additional conduction mechanism besides Fowler-Nordheim tunneling and stress-induced leakage current (SILC). The additional leakage contribution is analyzed with respect to the spatial distribution in the array and the shape of the current-voltage characteristics, and is interpreted as an anomalous SILC due to a two-trap leakage path. From the cycling dependence of the distribution tails related to one- and two-trap leakage, we provide evidence that the defect generation statistics is not Poissonian, but is instead correlated. Possible physical mechanisms responsible for correlated generation are also discussed.

引用

页码：1288 / 1295

页数：8

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