Equilibrium size distributions of clusters during strained epitaxial growth

被引:8
作者
Medeiros-Ribeiro, G [1 ]
Kamins, TI [1 ]
Ohlberg, DAA [1 ]
Williams, RS [1 ]
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 67卷 / 1-2期
关键词
nanocrystals; heteroepitaxy; cluster formation;
D O I
10.1016/S0921-5107(99)00206-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heteroepitaxial growth is the key technology that enables band-gap engineering, which is the ability to tailor the electronic and optical properties of materials. The growth of materials with different lattice parameters increases the spectrum of possibilities that one would ultimately have if all heteroepitaxial systems were perfectly matched, since strain can also affect materials properties. Films grown under stress store elastic energy by adapting their lattice parameter to the underlying substrate. Eventually, a portion of the elastic energy stored in the film is relaxed, by either introducing dislocations or by roughening of the growth front. This work focuses on the spontaneous formation of nanocrystals during heteroepitaxy, which produces ensembles of clusters with good uniformity. This observation prompts several questions regarding the mechanisms of cluster formation. More specifically, the relative importance of kinetics and energetics has been a controversial issue. We present data that sheds light onto this issue, addressing the distribution functions of island sizes and their evolution in order to separate kinetic from equilibrium processes. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:31 / 38
页数:8
相关论文
共 22 条
[1]   Equilibrium phase diagrams for dislocation free self-assembled quantum dots [J].
Daruka, I ;
Barabasi, AL .
APPLIED PHYSICS LETTERS, 1998, 72 (17) :2102-2104
[2]   Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium [J].
Daruka, I ;
Barabasi, AL .
PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3708-3711
[3]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[4]   ISLAND FORMATION IN GE/SI EPITAXY [J].
EAGLESHAM, DJ ;
HULL, R .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3) :197-200
[5]   SiGe island shape transitions induced by elastic repulsion [J].
Floro, JA ;
Lucadamo, GA ;
Chason, E ;
Freund, LB ;
Sinclair, M ;
Twesten, RD ;
Hwang, RQ .
PHYSICAL REVIEW LETTERS, 1998, 80 (21) :4717-4720
[6]   In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth .1. Si(001)/Ge [J].
Hammar, M ;
LeGoues, FK ;
Tersoff, J ;
Reuter, MC ;
Tromp, RM .
SURFACE SCIENCE, 1996, 349 (02) :129-144
[7]   Evolution of Ge islands on Si(001) during annealing [J].
Kamins, TI ;
Medeiros-Ribeiro, G ;
Ohlberg, DAA ;
Williams, RS .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1159-1171
[8]   Dome-to-pyramid transition induced by alloying of Ge islands on Si(001) [J].
Kamins, TI ;
Medeiros-Ribeiro, G ;
Ohlberg, DAA ;
Williams, RS .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (06) :727-730
[9]   Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].
Kamins, TI ;
Carr, EC ;
Williams, RS ;
Rosner, SJ .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219
[10]   Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy [J].
Kolosov, OV ;
Castell, MR ;
Marsh, CD ;
Briggs, GAD ;
Kamins, TI ;
Williams, RS .
PHYSICAL REVIEW LETTERS, 1998, 81 (05) :1046-1049