Improvement of hydrogenated amorphous-silicon TFT performances with low-k siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

被引：16

作者：

Chang, Ta-Shan ^{[1
]}

Chang, Ting- Chang

Liu, Po-Tsun

Chang, Tien-Shan

Tu, Chun-Hao

Yeh, Feng-Sheng

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Ctr Nanosci & Nanotechnol, Natl Nano Device Labs, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Ctr Nanosci & Nanotechnol, Natl Nano Device Labs, Kaohsiung 80424, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 11期

关键词：

low-dielectric constant; passivation; thin-film transistor (TFT);

D O I：

10.1109/LED.2006.884721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-dielectric-constant (low-k)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarizatiow In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm(2)/V center dot s and a subthreshold swing of 0.68 V.

引用

页码：902 / 904

页数：3

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