Chemical bevelling of GaAs-based structures

被引：16

作者：

Srnanek, R

Novotny, I

Hotovy, I

ElGomati, M

机构：

[1] Electronics Department, University of York, York

[2] Microelectronics Department, Slovak Technical University, 81219 Bratislava

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 47卷 / 02期

关键词：

chemical bevelling; gallium arsenide; optical interference microscopy;

D O I：

10.1016/S0921-5107(97)00024-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By using H3PO4/H2O2/H2O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5 x 10(-4) rad and good profile linearity. For the bevel surface observation optical interference microscopy was used. (C) 1997 Elsevier Science S.A.

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收藏

页码：127 / 130

页数：4

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