ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices

被引：1

作者：

Galicka-Fau, K. ^{[1
]}

Andrieux, M. ^{[1
]}

Legros, C. ^{[1
]}

Herbst-Ghysel, M. ^{[1
]}

Gallet, I. ^{[1
]}

Brunet, M. ^{[2
]}

Scheid, E. ^{[2
]}

Schamm, S. ^{[3
]}

机构：

[1] Univ Paris 11, LEMHE, ICMMO, CNRS,UMR 8182, F-91405 Orsay, France

[2] Univ Toulouse, LAAS CNRS, F-31055 Toulouse, France

[3] Univ Toulouse, CEMES CNRS, F-31055 Toulouse 4, France

来源：

EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ZIRCONIA; PHASE;

D O I：

10.1149/1.3207715

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Zirconia films are already used as thermal barrier, sensors and fuel cells and have great potential for electronic applications in particular as a dielectric in high density filter capacitors in future micro DC-DC converters. In this context, the SiO2/Si3N4 standard dielectric was replaced by ZrO2 (epsilon = 25-40) in 2D and 3D MIS (Metal-Isolator-Semiconductor) structures. Zirconia thin layers (100nm) were deposited between 550 degrees C and 700 degrees C on Si(100) planar substrates and inside pores etched in Si(100) by direct liquid injection MOCVD from Zr-2((OPr)-Pr-i)(6)(thd)(2) precursor and annealed at 900 degrees C to check phase stability. As-deposited films exhibit a cubic/tetragonal structure that was identified by XRD and FT-IR. The electric properties on specific samples were measured and discussed. After annealing, phase transformation occurs in the film, from cubic/tetragonal structure to a tetragonal/monoclinic one, depending on the deposition parameters.

引用

页码：1121 / 1128

页数：8

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