Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

被引：40

作者：

Ghosh, S ^{[1
]}

Kochman, B ^{[1
]}

Singh, J ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 18期

关键词：

D O I：

10.1063/1.126411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The heterostructure conduction band offset, Delta E-c, in InAs/GaAs self-organized quantum dots has been measured by deep level transient spectroscopy. Measurements were made with Au-Al0.18Ga0.82As Schottky diodes in which the multilayer dots are embedded in the ternary layer. The estimated value of the band offset Delta E-c = 341 +/- 30 meV. (C) 2000 American Institute of Physics. [S0003-6951(00)03618-4].

引用

页码：2571 / 2573

页数：3

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